This HEXFET® Power MOSFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area.
Key Features
l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated l Lead-Free.
Full PDF Text Transcription for IRF9204PBF (Reference)
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PD - 96277B Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Ava...
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l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated l Lead-Free Description This HEXFET® Power MOSFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts.
More Datasheets from International Rectifier (now Infineon)
IRF9204PBF Datasheet
